Main Articles Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

Wang, W.; Banerjee, S.; Chow, T.P.; Gutmann, Ronald J.; Isaacs-Smith, Tamara; Williams, John R.; Jones, Kenneth A.; Lelis, Aivars J.; Tipton, W.; Scozzie, Skip; Agarwal, Anant

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Date:

jun, 2004

DOI:

10.4028/www.scientific.net/MSF.457-460.1309

Issue First Page :

1309

Issue Last Page :

1312